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Title:

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Authors:

Yablonskiy, A. N.
Novikov, A. V.
Stepikhova, M. V.
Sergeev, S. M.
Baidakova, N. A.
Shaleev, M. V.
Krasilnik, Z. F.

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Semiconductors. 54(10):1352-1359

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Title:

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Authors:

Yurasov, D. V.
Novikov, A. V.Aff1, Aff2
Dyakov, S. A.
Stepikhova, M. V.
Yablonskiy, A. N.
Sergeev, S. M.
Utkin, D. E.
Krasilnik, Z. F.

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Semiconductors. 54(8):975-981

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Title:

Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping

Authors:

Rumyantsev, V. V.Aff1, Aff2
Fadeev, M. A.Aff1, Aff3
Aleshkin, V. Ya.Aff1, Aff2
Dubinov, A. A.
Utochkin, V. V.Aff1, Aff2
Antonov, A. V.
Ryzhov, D. A.
Kuritsin, D. I.
Gavrilenko, V. I.
Krasilnik, Z. F.
Sirtori, C.
Teppe, F.
Mikhailov, N. N.
Dvoretsky, S. A.
Morozov, S. V.Aff1, Aff2

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Journal of Infrared, Millimeter, and Terahertz Waves. 41(7):750-757

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Title:

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Authors:

Novikov, A. V.
Yurasov, D. V.
Baidakova, N. A.
Bushuykin, P. A.
Andreev, B. A.
Yunin, P. A.
Drozdov, M. N.
Yablonskiy, A. N.
Kalinnikov, M. A.
Krasilnik, Z. F.

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Semiconductors. 53(10):1318-1323

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Title:

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Authors:

Baidus, N. V.
Aleshkin, V. Ya.
Dubinov, A. A.
Krasilnik, Z. F.
Kudryavtsev, K. E.
Nekorkin, S. M.
Novikov, A. V.
Rykov, A. V.
Reunov, D. G.
Shaleev, M. V.
Yunin, P. A.
Yurasov, D. V.

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Semiconductors. 52(12):1547-1550

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Title:

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Authors:

Kudryatvsev, K. E.Aff1, Aff3
Dubinov, A. A.Aff1, Aff3
Aleshkin, V. Ya.Aff1, Aff3
Yurasov, D. V.
Gorlachuk, P. V.
Ryaboshtan, Yu. L.
Marmalyuk, A. A.
Novikov, A. V.Aff1, Aff3
Krasilnik, Z. F.

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Semiconductors. 52(11):1495-1499

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Title:

Stimulated Emission at 1.3-μm Wavelength in Metamorphic InGaAs/InGaAsP Structure with Quantum Wells Grown on Ge/Si(001) Substrate

Authors:

Aleshkin, V. Ya.Aff1, Aff2
Baidus, N. V.
Vikhrova, O. V.
Dubinov, A. A.Aff1, Aff2
Zvonkov, B. N.
Krasilnik, Z. F.Aff1, Aff2
Kudryavtsev, K. E.Aff1, Aff2
Nekorkin, S. M.
Novikov, A. V.Aff1, Aff2
Rykov, A. V.
Samartsev, I. V.
Yurasov, D. V.Aff1, Aff2

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Technical Physics Letters. 44(8):735-738

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Title:

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Authors:

Aleshkin, V. Ya.
Baidus, N. V.
Dubinov, A. A.
Krasilnik, Z. F.
Nekorkin, S. M.
Novikov, A. V.
Rykov, A. V.
Yurasov, D. V.
Yablonskiy, A. N.

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Semiconductors. May 2017 51(5):663-666

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Title:

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Authors:

Andreev, B. A.
Kudryavtsev, K. E.
Yablonskiy, A. N.
Lobanov, D. N.
Bushuykin, P. A.
Krasilnikova, L. V.
Skorokhodov, E. V.
Yunin, P. A.
Novikov, A. V.
Davydov, V. Yu
Krasilnik, Z. F.

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Scientific Reports. 8(1)

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Title:

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Authors:

Baidakova, N. A.
Novikov, A. V.
Shaleev, M. V.
Yurasov, D. V.
Morozova, E. E.
Shengurov, D. V.
Krasilnik, Z. F.

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Semiconductors. December 2016 50(12):1657-1661

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Title:

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Authors:

Shmagin, V. B.
Vdovichev, S. N.
Morozova, E. E.
Novikov, A. V.
Shaleev, M. V.
Shengurov, D. V.
Krasilnik, Z. F.

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Semiconductors. November 2016 50(11):1475-1478

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Title:

Conditions of growth of high-quality relaxed Si1–x Ge x layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

Authors:

Shengurov, V. G.
Chalkov, V. Yu.
Denisov, S. A.
Matveev, S. A.
Nezhdanov, A. V.
Mashin, A. I.
Filatov, D. O.
Stepikhova, M. V.
Krasilnik, Z. F.

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Semiconductors. September 2016 50(9):1248-1253

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Title:

On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology

Authors:

Serafimovich, P. G.
Stepikhova, M. V.
Kazanskiy, N. L.
Gusev, S. A.
Egorov, A. V.
Skorokhodov, E. V.
Krasilnik, Z. F.

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Semiconductors. August 2016 50(8):1112-1116

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Title:

Hodographs in diode-structure diagnostics

Authors:

Shmagin, V. B.
Kudryavtsev, K. E.
Novikov, A. V.
Shengurov, D. V.
Yurasov, D. V.
Krasilnik, Z. F.

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Semiconductors. November 2015 49(11):1443-1447

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Title:

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

Authors:

Baidakova, N. A.
Bobrov, A. I.
Drozdov, M. N.
Novikov, A. V.
Pavlov, D. A.
Shaleev, M. V.
Yunin, P. A.
Yurasov, D. V.
Krasilnik, Z. F.

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Semiconductors. August 2015 49(8):1104-1110

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Title:

GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties

Authors:

Vostokov, N. V.
Drozdov, Yu. N.
Lobanov, D. N.
Novikov, A. V.
Shaleev, M. V.
Yablonskii, A. N.
Krasilnik, Z. F.
Ankudinov, A. N.
Dunaevskii, M. S.
Titkov, A. N.
Lytvyn, P.
Yukhymchuk, V. U.
Valakh, M. Ya.

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Quantum Dots: Fundamentals, Applications, and Frontiers : Proceedings of the NATO Advanced Research Workshop on Quantum Dots: Fundamentals, Applications and Frontiers Crete, Greece, 20–24 July 2003. 190:333-351

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Title:

Smbe Grown Uniformly And Selectively Doped Si:Er Structures For Leds And Lasers

Authors:

Krasilnik, Z. F.
Aleshkin, V. Ya.
Andreev, B. A.
Gusev, O. B.
Jantsch, W.
Krasilnikova, L. V.
Kryzhkov, D. I.
Shengurov, V. G.
Shmagin, V. B.
Sobolev, N. A.
Stepikhova, M. V.
Yablonsky, A. N.

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Towards the First Silicon Laser. 93:445-454

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Title:

Specific features of the nonradiative relaxation of Er ions in epitaxial Si structures

Authors:

Kudryavtsev, K. E.
Kryzhkov, D. I.
Antonov, A. V.
Shengurov, D. V.
Shmagin, V. B.
Krasilnik, Z. F.

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Semiconductors. December 2014 48(12):1586-1591

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Title:

Si1 − x Ge x /Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates

Authors:

Denisov, S. A.
Matveev, S. A.
Chalkov, V. Yu.
Shengurov, V. G.
Drozdov, Yu. N.
Stepikhova, M. V.
Shengurov, D. V.
Krasilnik, Z. F.

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Semiconductors. March 2014 48(3):402-405

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Title:

Features of impurity photoconductivity in Si:Er/Si epitaxial diodes

Authors:

Antonov, A. V.
Kudryavtsev, K. E.
Shengurov, D. V.
Shmagin, V. B.
Krasilnik, Z. F.

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Semiconductors. November 2013 47(11):1500-1503

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Title:

Optical characteristics of laser diodes based on A3B5 compounds grown on germanium substrates

Authors:

Aleshkin, V. Ya.
Dikareva, N. V.
Dubinov, A. A.
Zvonkov, B. N.
Krasilnik, Z. F.
Nekorkin, S. M.

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Technical Physics Letters. March 2015 41(3):304-306

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Title:

Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms

Authors:

Shengurov, D. V.
Chalkov, V. Yu.
Denisov, S. A.
Shengurov, V. G.
Stepikhova, M. V.
Drozdov, M. N.
Krasilnik, Z. F.

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Semiconductors. March 2013 47(3):433-436

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Title:

Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

Authors:

Shaleev, M. V.
Novikov, A. V.
Yurasov, D. V.
Hartmann, J. M.
Kuznetsov, O. A.
Lobanov, D. N.
Krasilnik, Z. F.

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Semiconductors. March 2013 47(3):427-432

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Title:

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands

Authors:

Lobanov, D. N.
Novikov, A. V.
Kudryavtsev, K. E.
Shaleev, M. V.
Shengurov, D. V.
Krasilnik, Z. F.
Zakharov, N. D.
Werner, P.

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Semiconductors. November 2012 46(11):1418-1422

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Title:

Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping

Authors:

Yablonskiy, A. N.
Andreev, B. A.
Kryzhkov, D. I.
Kuznetsov, V. P.
Shengurov, D. V.
Krasilnik, Z. F.

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Semiconductors. November 2012 46(11):1407-1410

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Title:

Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation

Authors:

Andreev, B. A.
Krasilnik, Z. F.
Kryzhkov, D. I.
Kuznetsov, V. P.
Yablonskiy, A. N.

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Semiconductors. November 2012 46(11):1372-1375

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Title:

Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure

Authors:

Aleshkin, V. Ya.
Dubinov, A. A.
Gavrilenko, L. V.
Krasilnik, Z. F.
Kuritsyn, K. I.
Kryzhkov, D. I.
Morozov, S. V.

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Semiconductors. July 2012 46(7):917-920

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Title:

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si1 − x Ge x buffer layers

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Strelchuk, V. V.
Nikolenko, A. S.
Lytvyn, P. M.
Kladko, V. P.
Gudymenko, A. I.
Valakh, M. Ya.
Krasilnik, Z. F.
Lobanov, D. N.
Novikov, A. V.

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Semiconductors. May 2012 46(5):647-654

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Title:

Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon p-n junction

Authors:

Kozlov, V. A.
Obolensky, S. V.
Shmagin, V. B.
Krasilnik, Z. F.

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Semiconductors. January 2012 46(1):130-135

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Title:

Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

Authors:

Krasilnik, Z. F.
Kudryavtsev, K. E.
Kachemtsev, A. N.
Lobanov, D. N.
Novikov, A. V.
Obolenskiy, S. V.
Shengurov, D. V.

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Semiconductors. February 2011 45(2):225-229

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Title:

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Authors:

Shaleev, M. V.
Novikov, A. V.
Baydakova, N. A.
Yablonskiy, A. N.
Kuznetsov, O. A.
Lobanov, D. N.
Krasilnik, Z. F.

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Semiconductors. February 2011 45(2):198-202

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Title:

Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

Authors:

Kuznetsov, V. P.
Shmagin, V. B.
Drozdov, M. N.
Marychev, M. O.
Kudryavtsev, K. E.
Kuznetsov, M. V.
Andreev, B. A.
Kornaukhov, A. V.
Krasilnik, Z. F.

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Semiconductors. January 2011 45(1):130-133

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Title:

Special features of the excitation spectra and kinetics of photoluminescence of the Si1 − x Ge x :Er/Si structures with relaxed heterolayers

Authors:

Krasilnikova, L. V.
Yablonskiy, A. N.
Stepikhova, M. V.
Drozdov, Yu. N.
Shengurov, V. G.
Krasilnik, Z. F.

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Semiconductors. November 2010 44(11):1480-1485

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Title:

Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures

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Yablonskiy, A. N.
Andreev, B. A.
Krasilnikova, L. V.
Kryzhkov, D. I.
Kuznetsov, V. P.
Krasilnik, Z. F.

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Semiconductors. November 2010 44(11):1472-1475

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Title:

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

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Novikov, A. V.
Yablonskiy, A. N.
Platonov, V. V.
Obolenskiy, S. V.
Lobanov, D. N.
Krasilnik, Z. F.

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Semiconductors. March 2010 44(3):329-334

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Title:

Optically active centers in Si/Si1 − x Ge x :Er heterostructures containing Er ions

Authors:

Krasilnikova, L. V.
Strepikhova, M. V.
Baidakova, N. A.
Drozdov, Yu. N.
Krasilnik, Z. F.
Chalkov, V. Yu.
Shengurov, V. G.

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Semiconductors. July 2009 43(7):877-884

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Title:

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature

Authors:

Lobanov, D. N.
Novikov, A. V.
Kudryavtsev, K. E.
Shengurov, D. V.
Drozdov, Yu. N.
Yablonskiy, A. N.
Shmagin, V. B.
Krasilnik, Z. F.
Zakharov, N. D.
Werner, P.

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Semiconductors. March 2009 43(3):313-317

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Title:

Optically active Er centers in Si/Si1 − x Ge x structures under optical pumping

Authors:

Krasilnikova, L. V.
Baidakova, N. A.
Stepikhova, M. V.
Krasilnik, Z. F.
Chalkov, V. Yu.
Shengurov, V. G.

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Bulletin of the Russian Academy of Sciences: Physics. January 2009 73(1):96-100

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Title:

Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island

Authors:

Drozdov, Yu. N.
Krasilnik, Z. F.
Kudryavtsev, K. E.
Lobanov, D. N.
Novikov, A. V.
Shaleev, M. V.
Shengurov, D. V.
Shmagin, V. B.
Yablonskiy, A. N.

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Semiconductors. March 2008 42(3):286-290

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Title:

Electroluminescence at a wavelength of 1.54 μm in Si:Er/Si structures consisting of a number of p-n junctions

Authors:

Kuznetsov, V. P.
Stepihova, M. V.
Shmagin, V. B.
Marychev, M. O.
Alyabina, N. A.
Kuznetsov, M. V.
Andreev, B. A.
Kornaukhov, A. V.
Gorshkov, O. N.
Krasilnik, Z. F.

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Semiconductors. November 2011 45(11):1430-1432

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Title:

Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

Authors:

Kuznetsov, V. P.
Shmagin, V. B.
Marychev, M. O.
Kudryavtsev, K. E.
Kuznetsov, M. V.
Andreev, B. A.
Kornaukhov, A. V.
Gorshkov, O. N.
Krasilnik, Z. F.

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Semiconductors. December 2010 44(12):1597-1599

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