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Wyświetlanie 1-9 z 9
Tytuł :
Photogating WS 2 Photodetectors Using Embedded WSe 2 Charge Puddles.
Autorzy :
Tsai TH; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Liang ZY; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Lin YC; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
Wang CC; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Lin KI; Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan.
Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
Chiu PW; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.
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Źródło :
ACS nano [ACS Nano] 2020 Apr 28; Vol. 14 (4), pp. 4559-4566. Date of Electronic Publication: 2020 Apr 15.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Graphene-Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits.
Autorzy :
Yeh CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Liang ZY; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Lin YC; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan.
Chen HC; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Fan T; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Ma CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Department of Materials Science and Engineering , National Chiao Tung University , Hsinchu 30010 , Taiwan.
Chu YH; Department of Materials Science and Engineering , National Chiao Tung University , Hsinchu 30010 , Taiwan.
Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan.
Chiu PW; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.
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Źródło :
ACS nano [ACS Nano] 2020 Jan 28; Vol. 14 (1), pp. 985-992. Date of Electronic Publication: 2020 Jan 08.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer.
Autorzy :
Ke WC; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Tesfay ST; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Seong TY; Department of Materials Science and Engineering , Korea University , Seoul 02841 , Korea.
Liang ZY; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Chiang CY; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Chen CY; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Son W; Department of Materials Science and Engineering , National Taiwan University of Science and Technology , Taipei 106 , Taiwan.
Chang KJ; Materials and Electro-Optics Research Division , National Chung-Shan Institute of Science and Technology , Taoyuan 320 , Taiwan.
Lin JC; Materials and Electro-Optics Research Division , National Chung-Shan Institute of Science and Technology , Taoyuan 320 , Taiwan.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 Dec 26; Vol. 11 (51), pp. 48086-48094. Date of Electronic Publication: 2019 Dec 11.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
High-Mobility InSe Transistors: The Nature of Charge Transport.
Autorzy :
Tsai TH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Yang FS; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Department of Physics , National Chung Hsing University , Taichung 40227 , Taiwan.
Ho PH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Liang ZY; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Lien CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Ho CH; Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 10617 , Taiwan.
Lin YF; Department of Physics , National Chung Hsing University , Taichung 40227 , Taiwan.
Chiu PW; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617 , Taiwan.; Frontier Research Center on Fundamental and Applied Science of Maters , National Tsing Hua University , Hsinchu 30013 , Taiwan.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2019 Oct 02; Vol. 11 (39), pp. 35969-35976. Date of Electronic Publication: 2019 Sep 18.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
End-Bonded Metal Contacts on WSe 2 Field-Effect Transistors.
Autorzy :
Chu CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Lin HC; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.; Department of Physics , National Taiwan University , Taipei 10617 , Taiwan.
Yeh CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Liang ZY; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Chou MY; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.; Department of Physics , National Taiwan University , Taipei 10617 , Taiwan.
Chiu PW; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Institute of Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan.; Frontier Research Center on Fundamental and Applied Science of Matters , National Tsing Hua University , Hsinchu 30013 , Taiwan.
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Źródło :
ACS nano [ACS Nano] 2019 Jul 23; Vol. 13 (7), pp. 8146-8154. Date of Electronic Publication: 2019 Jun 19.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Ultrafast Monolayer In/Gr-WS 2 -Gr Hybrid Photodetectors with High Gain.
Autorzy :
Yeh CH; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Chen HC; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Lin HC; Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617 , Taiwan.; Department of Physics , National Taiwan University , Taipei 10617 , Taiwan.
Lin YC; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan.
Liang ZY; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.
Chou MY; Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617 , Taiwan.; Department of Physics , National Taiwan University , Taipei 10617 , Taiwan.
Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan.
Chiu PW; Department of Electrical Engineering , National Tsing Hua University , Hsinchu 30013 , Taiwan.; Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617 , Taiwan.; Frontier Research Center on Fundamental and Applied Science of Matters , National Tsing Hua University , Hsinchu 30013 , Taiwan.
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Źródło :
ACS nano [ACS Nano] 2019 Mar 26; Vol. 13 (3), pp. 3269-3279. Date of Electronic Publication: 2019 Feb 26.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Scalable van der Waals Heterojunctions for High-Performance Photodetectors.
Autorzy :
Yeh CH; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Liang ZY; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Lin YC; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Wu TL; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Fan T; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Chu YC; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Ma CH; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.; Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
Liu YC; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Chu YH; Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Chiu PW; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.; Institute of Atomic and Molecular Sciences, Academia Sinica , Taipei 10617, Taiwan.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2017 Oct 18; Vol. 9 (41), pp. 36181-36188. Date of Electronic Publication: 2017 Oct 05.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
Autorzy :
Ke WC; Department of Materials Science and Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan.
Lee FW; Department of Electrophysics, National Chiao-Tung University , HsinChu 300, Taiwan.
Chiang CY; Department of Materials Science and Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan.
Liang ZY; Department of Materials Science and Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan.
Chen WK; Department of Electrophysics, National Chiao-Tung University , HsinChu 300, Taiwan.
Seong TY; Department of Materials Science and Engineering, Korea University , Seoul 02841, Korea.
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Źródło :
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2016 Dec 21; Vol. 8 (50), pp. 34520-34529. Date of Electronic Publication: 2016 Dec 08.
Typ publikacji :
Journal Article
Czasopismo naukowe
Tytuł :
Single-Layer ReS₂: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy.
Autorzy :
Lin YC; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
Komsa HP
Yeh CH; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Björkman T; Department of Physics, Åbo Akademi , FI-20500 Turku, Finland.
Liang ZY
Ho CH
Huang YS
Chiu PW; Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Krasheninnikov AV; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research , 01328 Dresden, Germany.
Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan.
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Źródło :
ACS nano [ACS Nano] 2015 Nov 24; Vol. 9 (11), pp. 11249-57. Date of Electronic Publication: 2015 Sep 28.
Typ publikacji :
Journal Article; Research Support, Non-U.S. Gov't
Czasopismo naukowe
    Wyświetlanie 1-9 z 9

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