- Tytuł:
- Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration.
- Autorzy:
- Źródło:
- Materials Science in Semiconductor Processing. Jun2024, Vol. 176, pN.PAG-N.PAG. 1p.
Czasopismo naukowe