Subject Terms: "MODULATION-doped field-effect transistors" - OpacWWW

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Title:: Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy.
Authors:: Takeuchi, Kazuma (AUTHOR)
Ogura, Hiroyuki (AUTHOR)
Hasuike, Noriyuki (AUTHOR)
Kamikawa, Takeshi (AUTHOR); Show more
Source:: Scientific Reports. 2/9/2024, Vol. 14 Issue 1, p1-10. 10p.

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Title:: First demonstration of 30 eVee ionization energy resolution with Ricochet germanium cryogenic bolometers.
Authors:: Ricochet Collaboration (AUTHOR)
Augier, C. (AUTHOR)
Baulieu, G. (AUTHOR)
Belov, V. (AUTHOR)
Bergé, L. (AUTHOR)
Billard, J. (AUTHOR)
Bres, G. (AUTHOR)
Bret, J. -. L. (AUTHOR)
Broniatowski, A. (AUTHOR)
Calvo, M. (AUTHOR)
Cazes, A. (AUTHOR)
Chaize, D. (AUTHOR)
Chala, M. (AUTHOR)
Chapellier, M. (AUTHOR)
Chaplinsky, L. (AUTHOR)
Chemin, G. (AUTHOR)
Chen, R. (AUTHOR)
Colas, J. (AUTHOR)
Cudmore, E. (AUTHOR)
De Jesus, M. (AUTHOR); Show more
Source:: European Physical Journal C -- Particles & Fields. Feb2024, Vol. 84 Issue 2, p1-10. 10p.

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Title:: An Ameliorated Small-Signal Model Parameter Extraction Method for GaN HEMTs up to 110 GHz with Short-Test Structure.
Authors:: Yuan, Qingyu (AUTHOR)
Tang, Jinze (AUTHOR)
Luan, Xiaodong (AUTHOR)
Lin, Xin (AUTHOR)
Chang, Fan (AUTHOR)
Cheng, Jiali (AUTHOR); Show more
Source:: Active & Passive Electronic Components. 11/21/2023, p1-7. 7p.

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Title:: Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs.
Authors:: Shin, Ki-Yong (AUTHOR)
Shin, Ju-Won (AUTHOR)
Amir, Walid (AUTHOR)
Chakraborty, Surajit (AUTHOR)
Shim, Jae-Phil (AUTHOR)
Lee, Sang-Tae (AUTHOR)
Jang, Hyunchul (AUTHOR)
Shin, Chan-Soo (AUTHOR)
Kwon, Hyuk-Min (AUTHOR)
Kim, Tae-Woo (AUTHOR); Show more
Source:: Materials (1996-1944). Sep2023, Vol. 16 Issue 18, p6138. 11p.

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Title:: An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT.
Authors:: Bottaro, Enrico Alfredo (AUTHOR)
Rizzo, Santi Agatino (AUTHOR); Show more
Source:: Energies (19961073). Sep2023, Vol. 16 Issue 18, p6574. 19p.

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Title:: 氮化镓固态功率放大器发展概述.
Authors:: 谢红星
 路宏敏
 刘亮
 任永达
 李敏
 张嘉海; Show more
Alternate Title:: Overview of Gallium Nitride Solid State Power Amplifier Development.
Source:: Electronic Science & Technology. 2023, Vol. 36 Issue 8, p65-87. 8p.

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Title:: AlGaN HEMT Structures Grown on Miscut Si(111) Wafers.
Authors:: Sakharov, Alexei V. (AUTHOR)
Arteev, Dmitri S. (AUTHOR)
Zavarin, Evgenii E. (AUTHOR)
Nikolaev, Andrey E. (AUTHOR)
Lundin, Wsevolod V. (AUTHOR)
Prasolov, Nikita D. (AUTHOR)
Yagovkina, Maria A. (AUTHOR)
Tsatsulnikov, Andrey F. (AUTHOR)
Fedotov, Sergey D. (AUTHOR)
Sokolov, Evgenii M. (AUTHOR)
Statsenko, Vladimir N. (AUTHOR); Show more
Source:: Materials (1996-1944). Jun2023, Vol. 16 Issue 12, p4265. 11p.

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Title:: Impact of Charge-Trapping Effects on Reliability Instability in Al x Ga 1−x N/GaN High-Electron-Mobility Transistors with Various Al Compositions.
Authors:: Amir, Walid (AUTHOR)
Chakraborty, Surajit (AUTHOR)
Kwon, Hyuk-Min (AUTHOR)
Kim, Tae-Woo (AUTHOR); Show more
Source:: Materials (1996-1944). Jun2023, Vol. 16 Issue 12, p4469. 9p.

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Title:: X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology.
Authors:: Lee, Hyeonseok (AUTHOR)
Park, Hyeong-Geun (AUTHOR)
Le, Van-Du (AUTHOR)
Nguyen, Van-Phu (AUTHOR)
Song, Jeong-Moon (AUTHOR)
Lee, Bok-Hyung (AUTHOR)
Park, Jung-Dong (AUTHOR); Show more
Source:: Sensors (14248220). May2023, Vol. 23 Issue 10, p4840. 18p.

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Title:: 基于复合势垒的 AlGaN/ GaN 异质结材料的制备与性能研究.
Authors:: 彭大青
李忠辉
蔡利康
 李传皓
 杨乾坤
 张东国
 罗伟科; Show more
Alternate Title:: Growth and Properties of AlGaN / GaN Heterojunction Material with Coupled Barrier.
Source:: Journal of Synthetic Crystals. May2023, Vol. 52 Issue 5, p746-752. 7p.

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Title:: Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors.
Authors:: Fernandes Paes Pinto Rocha, Pedro (AUTHOR)
Vauche, Laura (AUTHOR)
Pimenta-Barros, Patricia (AUTHOR)
Ruel, Simon (AUTHOR)
Escoffier, René (AUTHOR)
Buckley, Julien (AUTHOR); Show more
Source:: Energies (19961073). Apr2023, Vol. 16 Issue 7, p2978. 28p.

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Title:: Evaluation of the Thermal Resistance in GaN HEMTs Using Thermo-Sensitive Electrical Parameters.
Authors:: Pirosca, Adrian Valeriu (AUTHOR)
Vecchio, Marcello (AUTHOR)
Rizzo, Santi Agatino (AUTHOR)
Iannuzzo, Francesco (AUTHOR); Show more
Source:: Energies (19961073). Mar2023, Vol. 16 Issue 6, p2779. 17p.

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Title:: DC Characterization and High-Frequency Performance Analysis of a GaN/AlGaN HET on a β-Ga2O3 Substrate.
Authors:: S., Anju (AUTHOR)
Jacob, Biji (AUTHOR)
Paul, Geenu (AUTHOR)
Suresh Babu, V. (AUTHOR); Show more
Source:: IETE Journal of Research. Mar2023, Vol. 69 Issue 3, p1460-1465. 6p.

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Title:: Design of a Class-F Power Amplifier with GaN Device Model and Reflection Data.
Authors:: Alemdag, Merve (AUTHOR)
Kacar, Firat (AUTHOR)
Kilinc, Sedat (AUTHOR); Show more
Source:: IETE Journal of Research. Feb2023, Vol. 69 Issue 2, p1117-1123. 7p.

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Title:: Improved V th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O 2 Plasma Treatment.
Authors:: Xie, Xinling (AUTHOR)
Wang, Qiang (AUTHOR)
Pan, Maolin (AUTHOR)
Zhang, Penghao (AUTHOR)
Wang, Luyu (AUTHOR)
Yang, Yannan (AUTHOR)
Huang, Hai (AUTHOR)
Hu, Xin (AUTHOR)
Xu, Min (AUTHOR); Show more
Source:: Nanomaterials (2079-4991). Mar2024, Vol. 14 Issue 6, p523. 8p.

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Title:: An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs.
Authors:: Wu, Wenwei (AUTHOR)
Yao, Ruohe (AUTHOR)
Liu, Yurong (AUTHOR)
Geng, Kuiwei (AUTHOR)
Zhu, Yingbin (AUTHOR); Show more
Source:: Physica Status Solidi. A: Applications & Materials Science. Mar2024, Vol. 221 Issue 6, p1-10. 10p.

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Title:: Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT.
Authors:: Cai, Jing (AUTHOR)
Yao, Ruo-He (AUTHOR)
Liu, Yu-Rong (AUTHOR)
Geng, Kui-Wei (AUTHOR); Show more
Source:: AIP Advances. Mar2024, Vol. 14 Issue 3, p1-7. 7p.

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Title:: Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.
Authors:: Parvez, Bazila (AUTHOR)
Sahu, Jyoti (AUTHOR)
Basak, Subhajit (AUTHOR)
Patil, Mahalaxmi (AUTHOR)
Sahu, Arpit (AUTHOR)
Garg, Gaurav (AUTHOR)
Ganguly, Swaroop (AUTHOR)
Saha, Dipankar (AUTHOR); Show more
Source:: Physica Status Solidi. A: Applications & Materials Science. Mar2024, Vol. 221 Issue 5, p1-5. 5p.

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Title:: 2–26.5 GHz GaN ultra‐wideband amplifier with over 2 W output power.
Authors:: Dai, Wei (AUTHOR)
Tang, Bowen (AUTHOR)
Lu, Junting (AUTHOR)
Feng, Xiaodong (AUTHOR)
Xu, Yuehang (AUTHOR); Show more
Source:: Microwave & Optical Technology Letters. Mar2024, Vol. 66 Issue 3, p1-5. 5p.

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Title:: An integrated wearable sticker based on extended-gate AlGaN/GaN high electron mobility transistors for real-time cortisol detection in human sweat.
Authors:: Xu, Boxuan (AUTHOR)
Chang, Hui (AUTHOR)
Yang, Guo (AUTHOR)
Xu, Zhan (AUTHOR)
Li, Jun (AUTHOR)
Gu, Zhiqi (AUTHOR)
Li, Jiadong (AUTHOR); Show more
Source:: Analyst. 2/7/2024, Vol. 149 Issue 3, p958-967. 10p.

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