Neutron scattering in the proximate quantum spin liquid α-RuCl 3 .
Autorzy:
Banerjee A; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. . Yan J; Material Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Knolle J; Department of Physics, Cavendish Laboratory, JJ Thomson Avenue, Cambridge CB3 0HE, UK. Bridges CA; Chemical Sciences Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Stone MB; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Lumsden MD; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. MandrusDG; Material Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.; Department of Materials Science and Engineering, University of Tennesee, Knoxville, TN 37996, USA. Tennant DA; Neutron Sciences Directorate, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Moessner R; Max Planck Institute for the Physics of Complex Systems, D-01187 Dresden, Germany. Nagler SE; Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. .
A parity-breaking electronic nematic phase transition in the spin-orbit coupled metal Cd 2 Re 2 O 7 .
Autorzy:
Harter JW; Department of Physics, California Institute of Technology, Pasadena, CA 91125, USA.; Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125, USA. Zhao ZY; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.; Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA. Yan JQ; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.; Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA. MandrusDG; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.; Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA. Hsieh D; Department of Physics, California Institute of Technology, Pasadena, CA 91125, USA. .; Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125, USA.
Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions.
Autorzy:
Stanford MG; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Pudasaini PR; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Belianinov A; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Cross N; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Noh JH; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Koehler MR; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. MandrusDG; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA.; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Duscher G; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA.; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Rondinone AJ; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Ivanov IN; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Ward TZ; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Rack PD; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA.; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Pokaż więcej
Źródło:
Scientific reports [Sci Rep] 2016 Jun 06; Vol. 6, pp. 27276. Date of Electronic Publication: 2016 Jun 06.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Valley-polarized exciton dynamics in a 2D semiconductor heterostructure.
Autorzy:
Rivera P; Department of Physics, University of Washington, Seattle, WA 98195, USA. Seyler KL; Department of Physics, University of Washington, Seattle, WA 98195, USA. Yu H; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. Schaibley JR; Department of Physics, University of Washington, Seattle, WA 98195, USA. Yan J; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA. MandrusDG; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA. Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, USA. Department of Physics and Astronomy, University of Tennessee, Knoxville, TN 37996, USA. Yao W; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. Xu X; Department of Physics, University of Washington, Seattle, WA 98195, USA. Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA. .
Electrical control of second-harmonic generation in a WSe2 monolayer transistor.
Autorzy:
Seyler KL; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Schaibley JR; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Gong P; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. Rivera P; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Jones AM; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Wu S; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Yan J; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. MandrusDG; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA [3] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA. Yao W; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. Xu X; 1] Department of Physics, University of Washington, Seattle, Washington 98195, USA [2] Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA.
Pokaż więcej
Źródło:
Nature nanotechnology [Nat Nanotechnol] 2015 May; Vol. 10 (5), pp. 407-11. Date of Electronic Publication: 2015 Apr 20.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Monolayer semiconductor nanocavity lasers with ultralow thresholds.
Autorzy:
Wu S; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Buckley S; Ginzton Laboratory, Stanford University, Stanford, California 94305, USA. Schaibley JR; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Feng L; 1] Department of Physics, University of Washington, Seattle, Washington 98195, USA [2] Department of Applied Physics, Tianjin University, Tianjin 300072, China. Yan J; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. MandrusDG; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA [3] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA. Hatami F; Department of Physics, Humboldt University, D-12489 Berlin, Germany. Yao W; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China. Vučković J; Ginzton Laboratory, Stanford University, Stanford, California 94305, USA. Majumdar A; Department of Electrical Engineering, University of Washington, Seattle, Washington 98195, USA. Xu X; 1] Department of Physics, University of Washington, Seattle, Washington 98195, USA [2] Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA.
Pokaż więcej
Źródło:
Nature [Nature] 2015 Apr 02; Vol. 520 (7545), pp. 69-72. Date of Electronic Publication: 2015 Mar 16.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy.
Autorzy:
Klots AR; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Newaz AK; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Wang B; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Prasai D; Interdisciplinary Graduate Program in Materials Science, Vanderbilt University, Nashville, TN-37234, USA. Krzyzanowska H; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Lin J; 1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN-37831, USA. Caudel D; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Ghimire NJ; 1] Department of Physics and Astronomy, University of Tennessee, Knoxville, TN-37996, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN-37831, USA. Yan J; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN-37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN-37996, USA. Ivanov BL; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Velizhanin KA; Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM-87545, USA. Burger A; Department of Physics, Fisk University, Nashville, TN-37208, USA. MandrusDG; 1] Department of Physics and Astronomy, University of Tennessee, Knoxville, TN-37996, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN-37831, USA [3] Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN-37996, USA. Tolk NH; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA. Pantelides ST; 1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN-37831, USA. Bolotin KI; Department of Physics and Astronomy, Vanderbilt University, Nashville, TN-37235, USA.
Pokaż więcej
Źródło:
Scientific reports [Sci Rep] 2014 Oct 16; Vol. 4, pp. 6608. Date of Electronic Publication: 2014 Oct 16.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers.
Autorzy:
Lin J; 1] Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [3]. Cretu O; 1] National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan [2]. Zhou W; Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Suenaga K; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan. Prasai D; Interdisciplinary Graduate Program in Materials Science, Vanderbilt University, Nashville, Tennessee 37235, USA. Bolotin KI; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA. Cuong NT; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan. Otani M; National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan. Okada S; Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8571, Japan. Lupini AR; Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Idrobo JC; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA. Caudel D; 1] Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA [2] Department of Physics, Fisk University, Nashville, Tennessee 37208, USA. Burger A; Department of Physics, Fisk University, Nashville, Tennessee 37208, USA. Ghimire NJ; 1] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA. Yan J; 1] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. MandrusDG; 1] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA [2] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA [3] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Pennycook SJ; Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA. Pantelides ST; 1] Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.
Pokaż więcej
Źródło:
Nature nanotechnology [Nat Nanotechnol] 2014 Jun; Vol. 9 (6), pp. 436-42. Date of Electronic Publication: 2014 Apr 28.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.
Autorzy:
Ross JS; Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA. Klement P; 1] Department of Physics, Justus Liebig University, 35392 Giessen, Germany [2] Department of Physics, University of Washington, Seattle, Washington 98195, USA. Jones AM; Department of Physics, University of Washington, Seattle, Washington 98195, USA. Ghimire NJ; 1] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA. Yan J; 1] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA [2] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee, 37996, USA. MandrusDG; 1] Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA [2] Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA [3] Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee, 37996, USA. Taniguchi T; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan. Watanabe K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan. Kitamura K; Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan. Yao W; Department of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Pokfulam Road, Hong Kong, China. Cobden DH; Department of Physics, Justus Liebig University, 35392 Giessen, Germany. Xu X; 1] Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA [2] Department of Physics, Justus Liebig University, 35392 Giessen, Germany.
Pokaż więcej
Źródło:
Nature nanotechnology [Nat Nanotechnol] 2014 Apr; Vol. 9 (4), pp. 268-72. Date of Electronic Publication: 2014 Mar 09.
Typ publikacji:
Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.
Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies
