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Wyszukujesz frazę ""Qiu, Zhi-Jun"" wg kryterium: Autor

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    Wyświetlanie 1-7 z 7
    Tytuł:
    Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces.
    Autorzy:
    Hu L; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Jin W; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Feng R; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Zaheer M; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Nie Q; Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China. .
    Chen G; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Qiu ZJ; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Cong C; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Liu R; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
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    Źródło:
    Materials (Basel, Switzerland) [Materials (Basel)] 2018 Aug 25; Vol. 11 (9). Date of Electronic Publication: 2018 Aug 25.
    Typ publikacji:
    Journal Article
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknie Pełny tekstSzczegóły
    Tytuł:
    Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.
    Autorzy:
    Sun F; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Li C; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Fu C; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Zhou X; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Luo J; Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China. .
    Zou W; Process Application, Applied Materials, Inc., Gloucester, MA 01930, USA. Wei_.
    Qiu ZJ; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Wu D; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
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    Źródło:
    Materials (Basel, Switzerland) [Materials (Basel)] 2018 Mar 22; Vol. 11 (4). Date of Electronic Publication: 2018 Mar 22.
    Typ publikacji:
    Journal Article
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknie Pełny tekstSzczegóły
    Tytuł:
    Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al₂O₃ Sensing Film.
    Autorzy:
    Sun C; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Zeng R; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Zhang J; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Qiu ZJ; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Wu D; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
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    Źródło:
    Materials (Basel, Switzerland) [Materials (Basel)] 2017 Dec 15; Vol. 10 (12). Date of Electronic Publication: 2017 Dec 15.
    Typ publikacji:
    Journal Article
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknieSzczegóły
    Tytuł:
    Stable and Fast-Response Capacitive Humidity Sensors Based on a ZnO Nanopowder/PVP-RGO Multilayer.
    Autorzy:
    Yang H; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Ye Q; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Zeng R; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Zhang J; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Yue L; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Xu M; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
    Qiu ZJ; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .; School of Information Science and Technology, Fudan University, Shanghai 200433, China. .
    Wu D; State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China. .
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    Źródło:
    Sensors (Basel, Switzerland) [Sensors (Basel)] 2017 Oct 23; Vol. 17 (10). Date of Electronic Publication: 2017 Oct 23.
    Typ publikacji:
    Journal Article
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknieSzczegóły
    Tytuł:
    Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications.
    Autorzy:
    Zhang Y; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Li H; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Wang H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Xie H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Liu R; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Zhang SL; Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala Box 534, SE-751 21, Sweden.
    Qiu ZJ; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
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    Źródło:
    Scientific reports [Sci Rep] 2016 Jul 12; Vol. 6, pp. 29615. Date of Electronic Publication: 2016 Jul 12.
    Typ publikacji:
    Journal Article; Research Support, Non-U.S. Gov't
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknieSzczegóły
    Tytuł:
    Accelerating Gas Adsorption on 3D Percolating Carbon Nanotubes.
    Autorzy:
    Li H; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Wen C; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Zhang Y; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Wu D; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Zhang SL; Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala Box 534, SE-751 21, Sweden.
    Qiu ZJ; State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
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    Źródło:
    Scientific reports [Sci Rep] 2016 Feb 18; Vol. 6, pp. 21313. Date of Electronic Publication: 2016 Feb 18.
    Typ publikacji:
    Journal Article; Research Support, Non-U.S. Gov't
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknieSzczegóły
    Tytuł:
    Photothermoelectric and photovoltaic effects both present in MoS2.
    Autorzy:
    Zhang Y; 1] State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China [2] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Li H; State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Wang L; State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Wang H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Xie X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem &Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050, China.
    Zhang SL; Solid-State Electronics, The Ångström Laboratory, Uppsala University, Uppsala Box 534, SE-751 21, Sweden.
    Liu R; State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Qiu ZJ; State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
    Pokaż więcej
    Źródło:
    Scientific reports [Sci Rep] 2015 Jan 21; Vol. 5, pp. 7938. Date of Electronic Publication: 2015 Jan 21.
    Typ publikacji:
    Journal Article; Research Support, Non-U.S. Gov't
    Czasopismo naukowe
    Pełny tekst  Link otwiera się w nowym oknieSzczegóły
      Wyświetlanie 1-7 z 7

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