- Tytuł:
- Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes.
- Autorzy:
- Źródło:
- Technical Physics; Feb2020, Vol. 65 Issue 2, p250-253, 4p, 1 Black and White Photograph, 2 Diagrams, 4 Graphs
Czasopismo naukowe