- Tytuł:
- Lithography-free fabrication of low operating voltage and large channel length graphene transistor with current saturation by utilizing Li+ of ion-conducting-oxide gate dielectric.
- Autorzy:
- Temat:
-
METAL oxide semiconductor field-effect transistors
LOW voltage systems
DIELECTRICS
FIELD-effect transistors
TRANSISTORS
GATES
GRAPHENE - Źródło:
- AIP Advances; Aug2020, Vol. 10 Issue 8, p1-5, 5p
Czasopismo naukowe