- Tytuł:
-
Double-gate structure enabling remote Coulomb scattering-free transport in atomic-layer-deposited IGO thin-film transistors with HfO
2 gate dielectric through insertion of SiO2 interlayer. - Autorzy:
- Źródło:
- Scientific Reports. 4/1/2024, Vol. 14 Issue 1, p1-11. 11p.
Czasopismo naukowe