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Skocz do pozycji: 5 5.

Title :

Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

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Rafí, J.M.

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In Solid State Electronics November 2013 89:198-206

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Skocz do pozycji: 6 6.

Title :

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness

Authors :

Rafí, J.M.

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In European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Microelectronics Reliability September-November 2013 53(9-11):1333-1337

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Skocz do pozycji: 7 7.

Title :

2 MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

Authors :

García, H.

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In Thin Solid Films 1 May 2013 534:482-487

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Skocz do pozycji: 8 8.

Title :

2 MeV electron irradiation effects on the electrical characteristics of metal–oxide–silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Authors :

Rafí, J.M.

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In Solid State Electronics January 2013 79:65-74

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Skocz do pozycji: 9 9.

Title :

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

Authors :

Nakashima, T.

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In ICSI-7, Thin Solid Films 1 February 2012 520(8):3337-3340

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Skocz do pozycji: 10 10.

Title :

Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

Authors :

Ohyama, H.

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In Post-Si-CMOS electronic devices: the role of Ge and III-V materials, Microelectronic Engineering 2011 88(4):484-487

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Skocz do pozycji: 11 11.

Title :

Damages of Ge devices by 2-MeV electrons and their recovery

Authors :

Ohyama, H.

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In Post-Si-CMOS electronic devices: the role of Ge and III-V materials, Microelectronic Engineering 2011 88(4):480-483

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Skocz do pozycji: 12 12.

Title :

Optical and electrical properties of electron-irradiated Cu(In,Ga)Se 2 solar cells

Authors :

Hirose, Y.

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In Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials, Thin Solid Films 2011 519(21):7321-7323

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Skocz do pozycji: 13 13.

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Skocz do pozycji: 15 15.

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Skocz do pozycji: 16 16.

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Skocz do pozycji: 17 17.

Title :

Degradation of GaN LEDs by electron irradiation

Authors :

Ohyama, H.

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In 3rd International Conference on Science and Technology of Advanced Ceramics, Materials Science & Engineering B 2010 173(1):57-60

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Skocz do pozycji: 18 18.

Title :

Device performance of p-Ge MOSFETs at liquid nitrogen temperature

Authors :

Ohyama, H.

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In Proceedings of the EMRS 2009 Spring Meeting Symposium I: Silicon and germanium issues for future CMOS devices, Thin Solid Films 2010 518(9):2513-2516

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Skocz do pozycji: 19 19.

Title :

Effects of electron irradiation on SiGe devices

Authors :

Ohyama, H.

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In Proceedings of the EMRS 2009 Spring Meeting Symposium I: Silicon and germanium issues for future CMOS devices, Thin Solid Films 2010 518(9):2517-2520

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Skocz do pozycji: 20 20.

Title :

Evaluation of the crystalline quality of β-Ga2O3 films by optical absorption measurements

Authors :

Takakura, K.

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In Physica B: Physics of Condensed Matter 15 December 2009 404(23-24):4854-4857

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