An investigation of secondary electron emission from ZnO based nanomaterials for future applications in radiation detectors.
Autorzy :
Boutachkov P; GSI Helmholtzzentrum Für Schwerionenforschung GmbH, Planckstraße 1, 64291, Darmstadt, Germany. VossKO; GSI Helmholtzzentrum Für Schwerionenforschung GmbH, Planckstraße 1, 64291, Darmstadt, Germany. Lee K; Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, Republic of Korea. Song MS; Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, Republic of Korea. Yi C; Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul, 08826, Republic of Korea. Cappellazzo M; Institut Für Kernphysik, University of Cologne, Zülpicher Straße 77, 50937, Köln, Germany. Kondziołka W; Institute of Physics, College of Natural Sciences, University of Rzeszów, Pigonia Street 1, 35-959, Rzeszów, Poland. Liskowicz A; Institute of Physics, College of Natural Sciences, University of Rzeszów, Pigonia Street 1, 35-959, Rzeszów, Poland. Cholewa M; Institute of Physics, College of Natural Sciences, University of Rzeszów, Pigonia Street 1, 35-959, Rzeszów, Poland. .
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Źródło :
Scientific reports [Sci Rep] 2021 Jan 12; Vol. 11 (1), pp. 737. Date of Electronic Publication: 2021 Jan 12.
Shrinking of Rapidly Evaporating Water Microdroplets Reveals their Extreme Supercooling.
Autorzy :
Goy C; Institut für Kernphysik, J. W. Goethe-Universität Frankfurt(M), 60438 Frankfurt(M), Germany. Potenza MAC; Dipartimento di Fisica, Università degli Studi di Milano, 20133 Milano, Italy. Dedera S; Institute of Earth Sciences, 69120 Heidelberg, Germany. Tomut M; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany. Guillerm E; Université Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, 69622 Lyon, France. Kalinin A; Institut für Kernphysik, J. W. Goethe-Universität Frankfurt(M), 60438 Frankfurt(M), Germany.; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany. VossKO; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany. Schottelius A; Institut für Kernphysik, J. W. Goethe-Universität Frankfurt(M), 60438 Frankfurt(M), Germany. Petridis N; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany. Prosvetov A; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany. Tejeda G; Laboratory of Molecular Fluid Dynamics, Instituto de Estructura de la Materia, CSIC, 28006 Madrid, Spain. Fernández JM; Laboratory of Molecular Fluid Dynamics, Instituto de Estructura de la Materia, CSIC, 28006 Madrid, Spain. Trautmann C; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany.; Material- und Geowissenschaften, Technische Universität Darmstadt, 64287 Darmstadt, Germany. Caupin F; Université Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, 69622 Lyon, France. Glasmacher U; Institute of Earth Sciences, 69120 Heidelberg, Germany. Grisenti RE; Institut für Kernphysik, J. W. Goethe-Universität Frankfurt(M), 60438 Frankfurt(M), Germany.; GSI-Helmholtzzentrum für Schwerionenforschung, 64291 Darmstadt, Germany.
Polymeric lithography editor: Editing lithographic errors with nanoporous polymeric probes.
Autorzy :
Rajasekaran PR; Department of Chemistry and Biochemistry, Southern Illinois University, Carbondale, IL 62901, USA. Zhou C; Department of Chemistry and Biochemistry, Southern Illinois University, Carbondale, IL 62901, USA. Dasari M; Department of Chemistry and Biochemistry, Southern Illinois University, Carbondale, IL 62901, USA. VossKO; GSI Helmholtzzentrum, 64291 Darmstadt, Germany. Trautmann C; GSI Helmholtzzentrum, 64291 Darmstadt, Germany.; Technische Universität, 64289 Darmstadt, Germany. Kohli P; Department of Chemistry and Biochemistry, Southern Illinois University, Carbondale, IL 62901, USA.
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Źródło :
Science advances [Sci Adv] 2017 Jun 09; Vol. 3 (6), pp. e1602071. Date of Electronic Publication: 2017 Jun 09 (Print Publication: 2017).
Typ publikacji :
Journal Article; Research Support, N.I.H., Extramural; Research Support, U.S. Gov't, Non-P.H.S.
Influence of surface states and size effects on the Seebeck coefficient and electrical resistance of Bi 1-x Sb x nanowire arrays.
Autorzy :
Cassinelli M; Material Research Department, GSI Helmholtz Centre for Heavy Ion Research GmbH, Planckstrasse. 1, D-64291 Darmstadt, Germany. ät Darmstadt, Material- und Geowissenschaften, Petersenstrasse 23, D-64287 Darmstadt, Germany. Müller S; Material Research Department, GSI Helmholtz Centre for Heavy Ion Research GmbH, Planckstrasse. 1, D-64291 Darmstadt, Germany. . VossKO; Material Research Department, GSI Helmholtz Centre for Heavy Ion Research GmbH, Planckstrasse. 1, D-64291 Darmstadt, Germany. . Trautmann C; Material Research Department, GSI Helmholtz Centre for Heavy Ion Research GmbH, Planckstrasse. 1, D-64291 Darmstadt, Germany. ät Darmstadt, Material- und Geowissenschaften, Petersenstrasse 23, D-64287 Darmstadt, Germany. Völklein F; University of Applied Sciences Wiesbaden, Am Brückweg 26, 65428, Rüsselsheim, Germany. Gooth J; Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany and IBM Research Zurich, Sauemerstrasse 4, 8803 Rueschlikon, Switzerland. Nielsch K; Institute of Applied Physics, Universität Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany. Toimil-Molares ME; Material Research Department, GSI Helmholtz Centre for Heavy Ion Research GmbH, Planckstrasse. 1, D-64291 Darmstadt, Germany. .
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Źródło :
Nanoscale [Nanoscale] 2017 Mar 02; Vol. 9 (9), pp. 3169-3179.
An infrastructure for accurate characterization of single-event transients in digital circuits.
Autorzy :
Savulimedu Veeravalli V; Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria. Polzer T; Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria. Schmid U; Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria. Steininger A; Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria. Hofbauer M; Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria. Schweiger K; Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria. Dietrich H; Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria. Schneider-Hornstein K; Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria. Zimmermann H; Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria. VossKO; Materials Research Group, Helmholtz Centre for Heavy Ion Research (GSI), Planckstrasse 1, D-64291 Darmstadt, Germany. Merk B; Materials Research Group, Helmholtz Centre for Heavy Ion Research (GSI), Planckstrasse 1, D-64291 Darmstadt, Germany. Hajek M; Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, A-1020 Vienna, Austria.
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