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Wyszukujesz frazę ""Wide-bandgap semiconductor"" wg kryterium: Temat


Tytuł :
Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
Współwytwórcy :
Verzellesi, Giovanni
Temat :
energy storage system
power conditioning system
silicon carbide
vanadium redox flow batteries
AlGaN/GaN
SiC
high electron mobility transistor
Schottky barrier diode
breakdown field
noise
charge traps
radio frequency
wide-bandgap (WBG)
gallium nitride (GaN)
silicon carbide (SiC)
high electron mobility transistor (HEMT)
metal-oxide-semiconductor field effect transistor (MOSFET)
driving technology
nickel oxide
annealing temperature
crystallite size
optical band gap
electrochromic device
indium oxide thin film
solution method
plasma surface treatment
bias stability
aluminum nitride
Schottky barrier diodes
radio frequency sputtering
X-ray diffraction
X-ray photoelectron spectroscopy
piezoelectric micromachined ultrasonic transducers
ranging
time of flight (TOF)
time to digital converter circuit (TDC)
AlGaN/GaN heterojunction
p-GaN gate
unidirectional operation
rectifying electrode
first-principles
density functional theory
pure β-Ga2O3
Sr-doped β-Ga2O3
p-type doping
band structure
density of states
optical absorption
AlN buffer layer
NH3 growth interruption
strain relaxation
GaN-based LED
low defect density
gate bias modulation
palladium catalyst
gallium nitride
nitrogen dioxide gas sensor
laser micromachining
sapphire
AlGaN/GaN heterostructures
high-electron mobility devices
p-GaN gate HEMT
normally off
low-resistance SiC substrate
temperature
high electron-mobility transistor (HEMT)
equivalent-circuit modeling
microwave frequency
scattering-parameter measurements
GaN
MIS-HEMTs
fabrication
threshold voltage stability
supercritical technology
GaN power HEMTs
breakdown voltage
current collapse
compensation ratio
auto-compensation
carbon doping
HVPE
AlN
high-temperature
buffer layer
nitridation
high-electron mobility transistor
heterogeneous integration
SOI
QST
crystal growth
cubic and hexagonal structure
blue and yellow luminescence
electron lifetime
wafer dicing
stealth dicing
laser thermal separation
dry processing
laser processing
wide bandgap semiconductor
photovoltaic module
digital signal processor
synchronous buck converter
polar
semi-polar
non-polar
magnetron sputtering
HTA
GaN-HEMT mesa structures
2DEG
X-ray sensor
X-ray imaging
bic Book Industry Communication:T Technology, engineering, agriculture:TB Technology: general issues
bic Book Industry Communication:T Technology, engineering, agriculture:TB Technology: general issues:TBX History of engineering & technology
bic Book Industry Communication:K Economics, finance, business & management:KN Industry & industrial studies:KNB Energy industries & utilities
Opis pliku :
application/octet-stream
Dostęp URL :
https://mdpi.com/books/pdfview/book/5423
Książka elektroniczna
Tytuł :
Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide
Autorzy :
Jiaye Zhang
Joe Willis
Zhenni Yang
Xu Lian
Wei Chen
Lai-Sen Wang
Xiangyu Xu
Tien-Lin Lee
Lang Chen
David O. Scanlon
Kelvin H.L. Zhang
Pokaż więcej
Temat :
wide-bandgap semiconductor
Ga2O3
electronic structure
transparent conducting oxide
work-function
Physics
QC1-999
Źródło :
Cell Reports Physical Science, Vol 3, Iss 3, Pp 100801- (2022)
Opis pliku :
electronic resource
Relacje :
http://www.sciencedirect.com/science/article/pii/S2666386422000716; https://doaj.org/toc/2666-3864
Dostęp URL :
https://doaj.org/article/bdf009b13bfc41b681e3cbc353a99717
Czasopismo naukowe
Tytuł :
Wide Bandgap Based Devices
Współwytwórcy :
Medjdoub, Farid
Temat :
GaN
high-electron-mobility transistor (HEMT)
ultra-wide band gap
GaN-based vertical-cavity surface-emitting laser (VCSEL)
composition-graded AlxGa1−xN electron blocking layer (EBL)
electron leakage
GaN laser diode
distributed feedback (DFB)
surface gratings
sidewall gratings
AlGaN/GaN
proton irradiation
time-dependent dielectric breakdown (TDDB)
reliability
normally off
power cycle test
SiC micro-heater chip
direct bonded copper (DBC) substrate
Ag sinter paste
wide band-gap (WBG)
thermal resistance
amorphous InGaZnO
thin-film transistor
nitrogen-doping
buried-channel
stability
4H-SiC
turn-off loss
ON-state voltage
breakdown voltage (BV)
IGBT
wide-bandgap semiconductor
high electron mobility transistors
vertical gate structure
normally-off operation
gallium nitride
asymmetric multiple quantum wells
barrier thickness
InGaN laser diodes
optical absorption loss
electron leakage current
wide band gap semiconductors
numerical simulation
terahertz Gunn diode
grooved-anode diode
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs)
vertical breakdown voltage
buffer trapping effect
gallium nitride (GaN)
power switching device
active power filter (APF)
power quality (PQ)
metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT)
recessed gate
double barrier
high-electron-mobility transistors
copper metallization
millimeter wave
wide bandgap semiconductors
flexible devices
silver nanoring
silver nanowire
polyol method
cosolvent
tungsten trioxide film
spin coating
optical band gap
morphology
electrochromism
self-align
hierarchical nanostructures
ZnO nanorod/NiO nanosheet
photon extraction efficiency
photonic emitter
wideband
HEMT
power amplifier
jammer system
GaN 5G
high electron mobility transistors (HEMT)
new radio
RF front-end
AESA radars
transmittance
distortions
optimization
GaN-on-GaN
schottky barrier diodes
high-energy α-particle detection
low voltage
thick depletion width detectors
bic Book Industry Communication:T Technology, engineering, agriculture:TB Technology: general issues
Opis pliku :
image/jpeg
Dostęp URL :
https://mdpi.com/books/pdfview/book/3759
Książka elektroniczna
Tytuł :
Circuit Models of Power MOSFETs Leading the Way of GaN HEMT Modelling—A Review
Autorzy :
Enrico Bottaro
Santi Agatino Rizzo
Nunzio Salerno
Pokaż więcej
Temat :
silicon MOSFET
silicon carbide (SiC)
SiC MOSFET
gallium nitride (GaN)
GaN HEMT
wide-bandgap semiconductor
Technology
Źródło :
Energies, Vol 15, Iss 3415, p 3415 (2022)
Opis pliku :
electronic resource
Relacje :
https://www.mdpi.com/1996-1073/15/9/3415; https://doaj.org/toc/1996-1073
Dostęp URL :
https://doaj.org/article/4d4de7807fd94d1198bd486b206ed7c8
Czasopismo naukowe
Tytuł :
Nano tree-like branched structure with α-Ga2O3 covered by γ-Al2O3 for highly efficient detection of solar-blind ultraviolet light using self-powered photoelectrochemical method
Autorzy :
Zhang, Junhua
Pokaż więcej
Źródło :
In Applied Surface Science 1 March 2021 541
Czasopismo naukowe

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