- Title:
- Effect of Hydrogen on Long-Term Reliability of InZnO TFTs Characterized by Low-Frequency Noise
- Authors:
- Subject Terms:
-
InZnO
defect
thin film transistors~(TFTs)
hydrogen
Electrical engineering. Electronics. Nuclear engineering
TK1-9971 - Source:
-
IEEE Journal of the Electron Devices Society, Vol 9, Pp 778-782 (2021) - File Description:
- electronic resource
- Relation:
-
https://ieeexplore.
ieee .org/document/9514542/; https://doaj.org/toc/2168-6734 - Access URL:
- https://doaj.org/article/ee82fd1cefc743999025f8805ad56585  Link opens in a new window
Academic Journal