- Tytuł:
- P‐11.6: Efficient radiative recombination centers induced by trench defects in multiple‐quantum wells of red InGaN light‐emitting diodes
- Autorzy:
- Źródło:
- SID Symposium Digest of Technical Papers; April 2023, Vol. 54 Issue: Supplement 1 p848-848, 1p
Periodyk